BB506M Renesas Technology, BB506M Datasheet - Page 3

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BB506M

Manufacturer Part Number
BB506M
Description
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
BB506M
900 MHz Power Gain, Noise Figure Test Circuit
REJ03G1604-0100
Page 3 of 8
L1:
L3:
Input
10
Rev.1.00
(
50
21
Ω)
29
Nov 26, 2007
L1
C4 to C6
C1, C2
R1
C4
V
L2
G1
C3
R1
R2
R3
C1
V
:
:
:
:
:
:
G2
G1
G2
C5
R2
Variable Capacitor (10 pF MAX)
Disk Capacitor (1000 pF)
Air Capacitor (1000 pF)
100 kΩ
47 kΩ
4.7 kΩ
RFC : f1 mm Copper wire with enamel 4 turns inside dia 6 mm
C3
L4:
L2:
D
R3
S
V
D
C6
L3
RFC
26
18
C2
L4
Output
(
50
(φ1 mm Copper wire)
Ω)
Unit : mm

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