BB506M Renesas Technology, BB506M Datasheet

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BB506M

Manufacturer Part Number
BB506M
Description
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
BB506M
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
Outline
Notes:
Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Notes: 3. Value on the glass epoxy board (50 mm
REJ03G1604-0100
Page 1 of 8
This device is sensitive to electro static discharge.
Built in Biasing Circuit; To reduce using parts cost & PC board space.
High gain
PG = 24 dB typ. (f = 900 MHz)
Low noise
NF = 1.4 dB typ. (f = 900 MHz)
Low output capacitance
Coss = 1.1 pF typ. (f = 1 MHz)
Provide mini mold packages: CMPAK-4 (SOT-343mod)
1. Marking is “FS-“.
2. BB506M is individual type number of RENESAS BBFET.
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
Item
Rev.1.00
Nov 26, 2007
Symbol
Pch
V
V
Tstg
Tch
V
I
G1S
G2S
DS
D
Note3
40 mm
An adequate careful handling procedure is requested.
1 mm).
3
2
–55 to +150
4
Ratings
150
300
+6
+6
–0
–0
30
6
1
1. Source
2. Gate1
3. Gate2
4. Drain
REJ03G1604-0100
Nov 26, 2007
Unit
mW
mA
(Ta = 25 C)
V
V
V
C
C
Rev.1.00

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BB506M Summary of contents

Page 1

... Coss = 1.1 pF typ MHz) Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) Notes: 1. Marking is “FS-“. 2. BB506M is individual type number of RENESAS BBFET. Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current ...

Page 2

... BB506M Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current www.DataSheet4U.com Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance ...

Page 3

... BB506M 900 MHz Power Gain, Noise Figure Test Circuit ( Input 50 www.DataSheet4U.com L1: 10 L3: REJ03G1604-0100 Rev.1.00 Page Ω C1 Variable Capacitor (10 pF MAX Disk Capacitor (1000 pF Air Capacitor (1000 pF) ...

Page 4

... BB506M Main Characteristics Maximum Channel Power Dissipation Curve 400 300 200 100 www.DataSheet4U.com 0 50 Ambient Temperature T * Value on the glass epoxy board (50 mm × × 1 mm) Drain Current vs. Gate1 Voltage G2S R = 100 kΩ Gate1 Voltage V Drain Current vs ...

Page 5

... BB506M Power Gain vs. Gate Resistance www.DataSheet4U.com 10 Gate Resistance R Gate2 to Source Voltage Gate2 to Source Voltage V Gain Reduction vs. Gate2 to Source Voltage Gate2 to Source Voltage V REJ03G1604-0100 Rev.1.00 Page ...

Page 6

... BB506M S Parameter vs. Frequency –.2 –.4 www.DataSheet4U.com –.6 Test condition: V 0.05 to 1.05 GHz (0.05 GHz step) S Parameter vs. Frequency 12 120° 150° 180° –150° –120° Test condition: V 0.05 to 1.05 GHz (0.05 GHz step) REJ03G1604-0100 Rev.1.00 Page 1 ...

Page 7

... BB506M S parameter Freq (MHz) Mag 50 0.995 100 0.991 150 0.992 200 0.987 250 0.984 300 0.981 350 0.975 400 0.967 www.DataSheet4U.com 450 0.964 500 0.958 550 0.951 600 0.939 650 0.933 700 0.922 750 0.916 800 0.900 850 0.892 900 0.883 950 0 ...

Page 8

... A-A Section Ordering Information Part Name BB506MFS-TL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G1604-0100 Rev.1.00 Page RENESAS Code Previous Code PLSP0004ZA-A MPAK-4 / MPAK-4V ...

Page 9

... Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications ...

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