BB502 Hitachi, BB502 Datasheet

no-image

BB502

Manufacturer Part Number
BB502
Description
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer
Hitachi
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BB502C
Manufacturer:
TE
Quantity:
1 457
Part Number:
BB502CBS-TL
Manufacturer:
INTERSIL
Quantity:
1 000
Part Number:
BB502M
Manufacturer:
Intersil
Quantity:
30
Part Number:
BB502M
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
BB502MBS-TL
Manufacturer:
HITACH
Quantity:
72 000
Features
Outline
Note:
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod)
1.
2.
Marking is “BS–”.
BB502C is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
CMPAK-4
UHF RF Amplifier
BB502C
3
2
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-810B(Z)
3rd. Edition
Jun. 1999

Related parts for BB502

BB502 Summary of contents

Page 1

... High gain typ 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-4(SOT-343mod) Outline Note: 1. Marking is “BS–”. 2. BB502C is individual type number of HITACHI BBFET. BB502C UHF RF Amplifier CMPAK ADE-208-810B(Z) 3rd ...

Page 2

... BB502C Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I ...

Page 3

... Main Characteristics Test Circuit for Operating Items ( Input , |yfs|, Ciss, Coss, Crss, NF, PG) D(op) Gate 1 Gate 2 Drain Application Circuit = 4 to 0.3 V AGC BBFET Source RFC Output BB502C 3 ...

Page 4

... BB502C 900MHz Power Gain, Noise Test Circuit Input ( L1 L3 Variable Capacitor (10pF MAX) C1 Disk Capacitor (1000pF Air Capacitor (1000pF 180 4 L2: L4: RFC: 1mm Copper wire with enamel 4turns inside dia 6mm ...

Page 5

... Gate1 Voltage G2S 150 200 Drain to Source Voltage Ta (° (V) BB502C Typical Output Characteristics = Drain Current vs. Gate1 Voltage = 180 Gate1 Voltage V (V) G1 ...

Page 6

... BB502C Drain Current vs. Gate1 Voltage 270 Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage 180 kHz Gate1 Voltage ( ...

Page 7

... Noise Figure vs. Gate Resistance G2S f = 900 MHz 200 500 Gate Resistance Noise Figure vs. Drain Current G2S R = variable 900 MHz Drain Current I (mA) D BB502C 1000 ) 20 7 ...

Page 8

... BB502C Drain Current vs. Gate Resistance G2S 100 200 Gate Resistance R Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage 1000 500 ( 180 900 MHz 4 3 (V) G2S Power Gain vs. ...

Page 9

... Gain Reduction vs. Gate2 to Source Voltage G2S 180 Gate2 to Source Voltage V BB502C 1 0 (V) G2S 9 ...

Page 10

... BB502C S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Test Condition G2S 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° –150° –120° ...

Page 11

... BB502C S22 ANG MAG ANG 88.6 0.995 –2.2 80.9 0.998 –4.0 86.6 0.997 –6.2 78.0 0.996 –8.2 78.9 0.994 –10.2 80.6 0.992 –12.2 70.9 0.990 –14.2 77.3 0.989 –16.3 72 ...

Page 12

... BB502C Package Dimensions 2.0 –0.2 1.3 0.65 0.65 + 0.1 0.3 — 0. 0.1 0.3 — 0.05 0.65 0.6 1. 0.1 0.3 — 0.05 + 0.1 0.4 — 0.05 + 0.1 0.16 — 0. 0.1 Hitahi Code CMPAK-4 EIAJ SC-82AB JEDEC Unit: mm ...

Page 13

... Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Hitachi Asia Ltd. Telex: 40815 HITEC HX Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. BB502C 13 ...

Related keywords