BUR52 STMicroelectronics, BUR52 Datasheet - Page 2

• Manufacturer Part Number: BUR52
• Description: HIGH CURRENT NPN SILICON TRANSISTOR
• Manufacturer: STMicroelectronics

BUR52
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
CEO(sus)
CE(sat)
BE(sat)
V
thj-case
h
I
I
I
CBO
CEO
I
EBO
t
EBO
FE
s/b
f
t
on
t
T
s
f
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Emitter-base Voltage
(I
Collector-emitter
Saturation Voltage
Base-emitter
Saturation Voltage
DC Current Gain
Second Breakdown
Collector Current
Transition-Frequency
Turn-on Time
Storage Time
Fall Time
Clamped E
Current
C
C
= 0)
= 0)
Parameter
E
B
s/b
= 0)
= 0)
Collector
V
V
V
V
I
I
I
I
I
I
I
I
V
f = 1 MHz
IC = 40 A
V
IC = 40 A
I
V
I
C
E
C
C
C
C
C
C
C
B2
CB
CB
CE
EB
CE
CC
clamp
= 10 mA
= 200 mA
= 25 A
= 40 A
= 25 A
= 40 A
= 5 A
= 40 A
= 1 A
= -4 A
= 7 V
= 350 V
= 350 V
=250 V
= 20 V
= 100 V
case
= 250 V
= 25
Test Conditions
o
C unless otherwise specified)
V
CC
I
I
I
I
V
V
V
T
I
I
t = 1 s
L = 500 H
B
B
B
B
B1
B1
CE
CE
CE
case
= 2 A
= 4 A
= 2 A
= 4 A
= 100 V
= 4 A
= 4 A
= 4 V
= 4 V
= 5 V
= 125
o
Max
C
Min.
17.5
250
10
20
15
40
Typ.
0.7
1.5
0.3
1.2
0.2
0.5
10
Max.
100
0.2
0.2
1.5
1.8
0.6
16
2
1
1
2
1
2
o
Unit
MHz
mA
mA
mA
C/W
V
V
V
V
V
V
A
A
A
s
s
s