BCP54-10 Infineon Technologies AG, BCP54-10 Datasheet - Page 3

• Manufacturer Part Number: BCP54-10
• Description: NPN Silicon AF Transistors
• Manufacturer: Infineon Technologies AG

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
AC Characteristics
Transition frequency
I
1) Pulse test: t =300 s, D = 2%
Collector-base breakdown voltage
I
C
E
C
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 10 mA, I
= 5 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 100 µA, I
= 30 V, I
= 30 V, I
C
CE
B
E
E
E
CE
B
= 0
= 0
CE
CE
CE
= 0
= 0 , T
= 2 V
= 0
= 50 mA
= 10 V, f = 100 MHz
= 2 V
= 2 V
= 2 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
BCP54
BCP55
BCP56
BCP54
BCP55
BCP56
BCP54...56
hFE-grp.10
hFE-grp.16
3
Symbol
V
V
V
I
I
h
h
h
V
V
f
T
CBO
CBO
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
100
45
60
80
45
60
40
63
25
25
5
-
-
-
-
-
Values
typ.
100
160
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BCP54...BCP56
max.
Nov-29-2001
100
250
160
250
0.5
20
1
-
-
-
-
-
-
-
-
-
-
MHz
Unit
-
V
nA
µA
V