BCP2098 SeCoS, BCP2098 Datasheet
BCP2098
Manufacturer Part Number
BCP2098
Description
Epitaxial Planar Transistor
Manufacturer
SeCoS
Datasheet
1.BCP2098.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP2098
Manufacturer:
SECOS
Quantity:
20 000
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
www.DataSheet4U.net
DESCRIPTION
FEATURES
CLASSIFICATION OF h
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage
Collector-emitter
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current (Pulse)
Total Power Dissipation
Junction & Storage temperature
Note:
Note:
Product-Rank
Excellent DC Current Gain Characteristics
Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC / IB=4A / 0.1A
1. Single pulse, PW=10ms.
2. When mounted on a 40*40*0.7mm ceramic board.
1. Measured under pulse condition. Pulse width≦300s, Duty Cycle≦2%.
Package
The BCP2098 is an epitaxial planar type NPN silicon transistor.
SOT-89
Range
Parameter
Parameters
Elektronische Bauelemente
BCP2098-Q
120~270
breakdown
MPQ
1
1K
FE (1)
1
BCP2098-R
180~390
Symbol
Symbol
V
V
V
T
V
(BR)CBO
(BR)CEO
(BR)EBO
Leader Size
I
V
V
J
I
CE(sat)
C
A suffix of “-C” specifies halogen & lead-free
V
h
CBO
EBO
(T
, T
I
f
P
FE
CBO
CEO
EBO
I
OB
CP
T
13’ inch
C
D
A
(T
STG
= 25°C unless otherwise specified)
A
= 25°C unless otherwise specified)
RoHS Compliant Product
Min.
120
50
20
6
-
-
-
-
-
Typ.
0.25
150
30
-
-
-
-
-
-
Ratings
0.5(2.0)
-55~150
50
20
10
Max.
6
5
390
0.5
0.5
Epitaxial Planar Transistor
1
-
-
-
-
-
2
REF.
B
C
D
A
B
E
F
BCP2098
F
Unit
MHz
NPN Silicon
Any changes of specification will not be informed individually.
μA
μA
pF
V
V
V
V
Min.
4.40
3.94
1.40
2.30
1.50
0.89
Millimeter
G
H
I
I
I
V
V
V
I
V
f=100MHz
V
A
E
J
C
C
E
C
CB
EB
CE
CE
CB
=50μA, I
=1mA, I
=50μA, I
=4A, I
Max.
4.60
4.25
1.60
2.60
1.70
1.20
=40V, I
=5V, I
=2V, I
=6V, I
=20V, I
Test Conditions
SOT-89
B
=0.1A
REF.
1
C
C
C
B
D
K
G
H
J
K
L
E
C
=0
=0
=0.5A
=50mA,
E
E
=0
=0
=0
=0, f=1MHz
2
L
Unit
3
°C
Min.
0.40
0.32
0.35
W
V
V
V
A
A
1.50 TYP
3.00 TYP
Millimeter
C
Page 1 of 2
Max.
0.58
0.52
0.44
4
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BCP2098 Summary of contents
Page 1
... Elektronische Bauelemente DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. www.DataSheet4U.net FEATURES Excellent DC Current Gain Characteristics Low Saturation Voltage, Typically VCE(SAT)=0.25V IB=4A / 0.1A CLASSIFICATION (1) BCP2098-Q Product-Rank 120~270 Range PACKAGE INFORMATION Package MPQ SOT-89 1K ABSOLUTE MAXIMUM RATINGS ...
Page 2
... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B BCP2098 NPN Silicon Epitaxial Planar Transistor Any changes of specification will not be informed individually. Page ...