SMG1333 SeCoS Halbleitertechnologie, SMG1333 Datasheet

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SMG1333

Manufacturer Part Number
SMG1333
Description
P-channel Enhancement Mode Power Mos.fet
Manufacturer
SeCoS Halbleitertechnologie
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Description
The SMG1333 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
Features
* Simple Gate Drive
* Small package outline
* Fast switching speed
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
Marking : 1333
Thermal Data
Absolute Maximum Ratings
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Sate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance Junction-ambient
Elektronische Bauelemente
1,2
Parameter
Parameter
3
3
3
A suffix of "-C" specifies halogen & lead-free
RoHS Compliant Product
S
H
Gate
2
P
Top View
I
I
L
D
D
D
@T
@T
Tj, Tstg
P-Channel Enhancement Mode Power Mos.FET
@T
A
G
Symbol
3
Symbol
Rthj-a
V
Source
V
I
DM
A
A
GS
DS
A
=25
=70
=25
1
Drain
o
o
C
C
o
C
D
-550mA, -20V,R
B
C
G
K
SMG1333
S
D
Ratings
-55~+150
Ratings
Any changing of specification will not be informed individual
±12
-550
-440
0.008
-2.5
-20
125
1
J
DS(ON)
Dim
All Dimension in mm
A
B
C
D
G
H
K
S
J
L
800m
SC-59
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Min
Ω
W / C
o
Unit
mA
C
Unit
mA
V
V
W
A
o
/W
C
o
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Page 1 of 4

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SMG1333 Summary of contents

Page 1

... Elektronische Bauelemente Description The SMG1333 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features * Simple Gate Drive * Small package outline * Fast switching speed Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System Marking : 1333 Absolute Maximum Ratings ...

Page 2

... Td 10 (Off Ciss _ 25 Coss _ Crss 20 _ Gfs 1.0 Symbol Min. Typ ≦ copper pad of FR4 board; 270 ° C/W 2 SMG1333 -550mA, -20V,R 800m DS(ON) Max. Unit Test Condition =0V Reference -1 GS, _ ± 100 V = 12V ± ...

Page 3

... Elektronische Bauelemente Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SMG1333 -550mA, -20V,R DS(ON) P-Channel Enhancement Mode Power Mos.FET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. ...

Page 4

... Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SMG1333 -500mA, -20V,R DS(ON) P-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 800m Ω ...

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