BU4525AX Philips Semiconductors, BU4525AX Datasheet - Page 4

• Manufacturer Part Number: BU4525AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1998
Silicon Diffused Power Transistor
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
100
1.2
1.1
0.9
0.8
0.7
0.6
10
10
8
6
4
2
0
1
1
0.01
0
hFE
0
ts/tf / us
VBEsat / V
Fig.7. High and low DC current gain.
VCE = 5V
I
C
=9 A; T
0.1
1
1
IC = 9 A
j
= 85˚C; f = 16kHz
1
2
IC = 7 A
2
ts
tf
Ths = 25 C
Ths = 85 C
10
Ths = 85 C
ICsat = 9 A
Freq = 16 kHz
3
3
Ths = 25 C
Ths = 85 C
IC / A
BU4525AF/X/W
BU4525 5V
IB / A
IB / A
100
4
4
4
Fig.12. I
10
120
110
100
0.001
8
6
4
2
0
0.01
90
80
70
60
50
40
30
20
10
0.1
0
10
1.0E-07
0
Ic(sat) (A)
1
Fig.10. Normalised power dissipation.
Fig.11. Transient thermal impedance.
Zth K/W
0
PD%
operation for optimum performance
0.05
0.02
Csat
0.5
0.2
0.1
0
20
during normal running vs. frequency of
20
1.0E-05
PD% = 100 P
40
Frequency (kHz)
40
60
1.0E-03
t / s
Ths / C
P
80
D
Normalised Power Derating
D
60
/P
with heatsink compound
D 25˚C
t
p
Product specification
100
T
1.0E-01
D =
BU4525AX
80
120
BU4525AF
T
t
p
t
Rev 1.100
140
1.0E+01
100