BU4525AX Philips Semiconductors, BU4525AX Datasheet - Page 2

• Manufacturer Part Number: BU4525AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
October 1998
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
C
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
c
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
R.H.
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
I
CONDITIONS
I
I
(I
I
(I
B
B
C
C
C
C
E
Csat
Csat
j
B2
B2
BE
BE
EB
= 1 mA
= 0 A; I
= 0 A; V
= 9.0 A;I
= 9.0 A;I
= 1.0 A; V
= 9.0 A; V
= 125 ˚C
65 % ; clean and dustfree
= -4.5 A)
= -4.5 A)
= 0 V; V
= 0 V; V
= 6.0 V; I
= 9.0 A;I
= 7.0 A;I
2
C
CB
B
B
= 100 mA;
CE
CE
= 2.25A
= 2.25A
CE
CE
B1
B1
= 10 V; f = 1 MHz
C
= V
= V
= 0 A
= 5 V
= 5 V
= 1.8 A
= 1.4 A
CESMmax
CESMmax
;
MIN.
MIN.
0.88
800
7.5
4.2
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.97
0.15
145
5.8
3.7
0.4
22
12
2
-
-
-
-
-
-
Product specification
BU4525AX
MAX.
MAX.
MAX.
2500
1.06
0.55
100
1.0
2.0
3.0
7.6
4.5
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
mA
mA
pF
pF
V
V
V
V
V
A
s
s
s
s