BU4506DF Philips Semiconductors, BU4506DF Datasheet - Page 4

• Manufacturer Part Number: BU4506DF
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
January 1999
Silicon Diffused Power Transistor
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
0.8
0.6
0.4
0.2
1.2
1.1
0.9
0.8
0.7
0.6
10
8
6
4
2
0
1
0
1
0.1
0
0
ts/tf/ us
VCESAT / V
VBESAT / V
I
C
Ths = 25 C
Ths = 85 C
=3 A; T
0.5
1
j
= 85˚C; f = 16kHz
1
1
2
IC = 3 A
IC/IB = 5
Ths = 25 C
Ths = 85 C
1.5
Ths = 85 C
ICsat = 3 A
3
Freq = 16 kHz
BU4506DF/X/Z
BU4506DF/X/Z
IC / A
BU4506D ts/tf
IB / A
IB / A
10
4
2
4
120
110
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0
0.1
10
Fig.10. Normalised power dissipation.
1
1E-06
Fig.11. Transient thermal impedance.
0
PD%
`
Zth (K/W)
D = 0
D = 0.5
0.2
0.05
0.02
0.1
1E-05
20
PD% = 100 P
1E-04
40
1E-03
60
Ths / C
t / s
1E-02
80
Normalised Power Derating
D
/P
P
with heatsink compound
D 25˚C
D
Product specification
1E-01 1E+00 1E+01
100
BU4506DF/DX
tp
T
BU4506DF
D = tp/T
120
t
Rev 1.000
140