BU4506DF Philips Semiconductors, BU4506DF Datasheet

Page 1

... 0. kHz 3.0 A kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4506DF TYP. MAX. UNIT - 1500 V - 800 3 1.55 1.9 V 300 400 ns SYMBOL ...

Page 2

... CONDITIONS Csat / Product specification BU4506DF MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 - - - - 3.0 0.8 0.89 ...

Page 3

... ICsat Lc D.U.T. LB Cfb Rbe Fig.4. Switching times test circuit . BU4506DF/X/Z hFE VCE = 1V Ths = 25 C Ths = 85 C 0.1 1 Fig.5. High and low DC current gain. BU4506DF/X/Z hFE Ths = 25 C VCE = 5V Ths = 85 C 0.1 1 Fig.6. High and low DC current gain Rev 1.000 ...

Page 4

... ICsat = 3 A Ths = 85 C Freq = 16 kHz 1 Product specification BU4506DF Normalised Power Derating PD% with heatsink compound 100 Ths / C Fig.10. Normalised power dissipation. PD% = 100 25˚C BU4506DF/DX Zth (K/ 0.5 1 0.2 0.1 0.05 0.1 0. 0.01 T 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+ Fig.11. Transient thermal impedance. ...

Page 5

... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1999 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 5 Product specification BU4506DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1999 6 Product specification BU4506DF Rev 1.000 ...