BD131 Philips Semiconductors, BD131 Datasheet - Page 3

• Manufacturer Part Number: BD131
• Description: NPN power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
1999 Apr 12
R
R
I
I
h
V
V
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
th j-a
th j-mb
= 25 C unless otherwise specified.
NPN power transistor
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
T
E
E
C
C
C
C
C
C
C
C
amb
= 0; V
= 0; V
= 0; V
= 0.5 A; V
= 2 A; V
= 0.5 A; I
= 2 A; I
= 0.5 A; I
= 2 A; I
= 0.25 A; V
= 25 C
3
CB
CB
EB
B
B
CE
CONDITIONS
= 50 V
= 50 V; T
= 5 V
= 200 mA
= 200 mA
B
B
CE
= 50 mA
= 50 mA
= 1 V; (see Fig.2)
CE
note 1
= 12 V; (see Fig.2)
= 5 V; f = 100 MHz;
CONDITIONS
j
= 150 C
40
20
60
MIN.
VALUE
100
6
Product specification
50
10
50
300
700
1.2
1.5
MAX.
BD131
UNIT
K/W
K/W
nA
nA
mV
mV
V
V
MHz
UNIT
A