BD131 Philips Semiconductors, BD131 Datasheet - Page 2

• Manufacturer Part Number: BD131
• Description: NPN power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 12
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High current (max. 3 A)
Low voltage (max. 45 V).
General purpose power applications.
CBO
CEO
EBO
tot
NPN power transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
mb
2
PINNING
60 C
handbook, halfpage
CONDITIONS
Fig.1
PIN
1
2
3
Simplified outline (TO-126; SOT32)
and symbol.
1
emitter
collector, connected to metal part of
mounting surface
base
2
3
Top view
65
65
DESCRIPTION
MIN.
3
Product specification
70
45
6
3
6
0.5
15
+150
150
+150
MAM254
MAX.
2
1
BD131
V
V
V
A
A
A
W
C
C
C
UNIT