DIM800NSM33-F000 Dynex Semiconductor, DIM800NSM33-F000 Datasheet - Page 3

• Manufacturer Part Number: DIM800NSM33-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Note:
†
*
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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Symbol
L is the circuit inductance + L
Measured at the auxiliary terminals
V
case
V
SC
CE(sat)
R
I
I
GE(TH)
C
C
V
I
CES
GES
L
I
FM
INT
res
F
F
ies
M
Data
= 25° C unless stated otherwise.
†
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation
voltage
Diode forward current
Diode maximum forward current t
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance
Internal resistance
Short circuit current, I
Parameter
M
SC
V
V
V
I
V
V
DC
I
I
V
V
T
V
V
IEC 6074-9
C
p
F
F
j
GE
GE
GE
GE
GE
CE
CE
GE
CE(max)
= 1ms
= 800A
= 800A, T
= 80mA, V
= 125° C, V
= 0V,V
= 0V, V = V ,T
= ±15V, V
= 15V, I
=15V, I
= 25V, V
= 25V, V
= V
Test Conditions
CE
CES
C
J
C
t
GE
GE
GE
= 800A,T
= 125 ° C
p
= V
= 800A
CC
CE
– L
= V
= 0V, f = 1MHz
= 0V, f = 1MHz
= 2500V
= 0V
CES
*
CE
x di/dt
case
J
=125 ° C
= 125 ° C
I
I
1
2
Min Typ. Max
5.5
1600
4000
3700
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800
144
135
6.5
2.8
3.6
2.9
3.0
2.2
15
DIM800NSM33-F000
7.0
60
4
1
Units
mA
mA
nH
µ
nF
nF
V
V
V
A
A
V
V
A
A
A
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