DIM800NSM33-A000 Dynex, DIM800NSM33-A000 Datasheet - Page 7

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DIM800NSM33-A000

Manufacturer Part Number
DIM800NSM33-A000
Description
Single Switch IGBT Module Preliminary Information
Manufacturer
Dynex
Datasheet
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1400
1200
1000
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
500
0.5
T
T
j
j
= 125˚C
= 25˚C
1.0
1000
Reverse voltage, V
Forward voltage, V
1.5
1500
2.0
2000
R
2.5
F
- (V)
- (V)
2500
3.0
3000
3.5
3500
4.0
10000
1000
1800
1600
1400
1200
1000
100
800
600
400
200
10
1
0
0
1
T
0
vj
= 125˚C, T
Fig. 8 Reverse bias safe operating area
Fig. 10 Forward bias safe operating area
500
Collector emitter voltage, V
Collector emitter voltage, V
10
c
1000
= 80˚C
1500
DIM800NSM33-A000
100
I
C(max)
2000
DC
ce
ce
2500
- (V)
1000
- (V)
3000
10000
3500
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