DIM800NSM33-A000 Dynex, DIM800NSM33-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM800NSM33-A000
• Description: Single Switch IGBT Module Preliminary Information
• Manufacturer: Dynex

DIM800NSM33-A000
TYPICAL CHARACTERISTICS
6/10
1600
1400
1200
1000
1400
1200
1000
800
600
400
200
800
600
400
200
Fig. 5 Typical switching energy vs collector current
0
0
0
0
Conditions:
T
R
V
C
Common emitter.
T
case
case
cc
g
ge
= 2.2 Ohms
= 1800V
= 150nF
Fig. 3 Typical output characteristics
= 125˚C
= 25˚C
1
200
Collector-emitter voltage, Vce - (V)
Collector current, I
2
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
400
3
600
c
- (A)
4
800
V
V
V
V
GE
GE
GE
GE
5
= 20V
= 15V
= 12V
= 10V
E
E
E
on
off
rec
1000
6
1600
1400
1200
1000
2000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
Fig. 6 Typical switching energy vs gate resistance
0
0
1
2
Common emitter.
T
Conditions:
T
I
V
C
C
case
case
cc
ge
1.5 2
= 800A
Fig. 4 Typical output characteristics
= 1800V
= 150nF
= 125˚C
= 125˚C
2.5
2.5 3
Collector-emitter voltage, Vce - (V)
Gate resistance, R
3
3.5 4
3.5
4.5 5
www.dynexsemi.com
g
- (Ohms)
5.5 6
4
6.5 7
V
V
V
V
4.5
GE
GE
GE
GE
= 20V
= 15V
= 12V
= 10V
7.5 8
E
E
E
on
off
rec
5