DIM800FSM17-A000 Dynex Semiconductor, DIM800FSM17-A000 Datasheet - Page 7

• Manufacturer Part Number: DIM800FSM17-A000
• Description: Single Switch IGBT Module Preliminary Information
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1600
1400
1200
1000
800
600
400
200
800
600
500
400
300
200
100
700
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
V
and not the auxiliary terminals
Fig. 7 Diode typical forward characteristics
T
F
j
is measured at power busbars
= 125˚C
0.5
T
T
j
j
= 25˚C
= 125˚C
400
1.0
Foward voltage, V
Reverse voltage, V
800
1.5
2.0
1200
F
R
- (V)
- (V)
2.5
1600
3.0
3.5
2000
10000
1000
1800
1600
1200
1000
2000
1400
100
800
600
400
200
10
1
0
0
1
T
V
R
case
ge
g(min)
Fig. 8 Reverse bias safe operating area
Fig. 10 Forward bias safe operating area
= ±15V
= 125˚C
= 2.2Ω
400
Collector-emitter voltage, V
Collector-emitter voltage, V
10
I
C(max)
800
DC
DIM800FSM17-A000
100
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Module
1200
Chip
T
vj
= 125˚C, T
ce
ce
- (V)
1000
- (V)
1600
c
t
t
p
t
p
= 75˚C
p
= 100µs
= 50µs
= 1 ms
10000
2000
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