DIM800FSM17-A000 Dynex Semiconductor, DIM800FSM17-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM800FSM17-A000
• Description: Single Switch IGBT Module Preliminary Information
• Manufacturer: Dynex Semiconductor

DIM800FSM17-A000
TYPICAL CHARACTERISTICS
6/10
1800
1600
1400
1200
1000
400
350
300
250
200
150
100
800
600
400
200
50
Fig. 5 Typical switching energy vs collector current
0
0
0
0
Conditions:
V
T
R
Common emitter
T
V
and not the auxiliary terminals
ce
c
g
ce
case
= 125°C
= 2.2Ω
= 900V
is measured at power busbars
0.5
Fig. 3 Typical output characteristics
= 25˚C
200
1
Collector-emitter voltage, V
Collector current, I
1.5
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
400
2
2.5
600
C
3
- (A)
ce
V
3.5
GE
- (V)
= 20V
800
15V
12V
10V
4
E
E
E
4.5
on
off
rec
1000
5
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
Fig. 6 Typical switching energy vs gate resistance
0
0
0
0
Conditions:
V
I
T
C
Common emitter
T
V
and not the auxiliary terminals
c
ce
ce
case
= 800A
= 125°C
0.5
Fig. 4 Typical output characteristics
= 900V
is measured at power busbars
= 125˚C
2
1 1.5
Collector-emitter voltage, V
Gate Resistance, R
4
2 2.5
6
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3 3.5
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g
- (Ohms)
8
4 4.5
ce
V
GE
- (V)
= 20V
15V
12V
10V
10
5 5.5
E
E
E
off
on
rec
12
6