DIM600DDM17-A000 Dynex Semiconductor, DIM600DDM17-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM600DDM17-A000
• Description: Dual Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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ELECTRICAL CHARACTERISTICS
T
T
Symbol
Symbol
case
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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E
E
E
E
t
t
t
t
E
d(off)
d(on)
E
Q
d(off)
d(on)
Q
Q
OFF
I
REC
OFF
I
REC
t
t
t
t
= 25° C unless stated otherwise.
= 125° C unless stated otherwise.
ON
rr
rr
f
r
O
f
r
g
rr
rr
SEMICONDUCTOR
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
I
G(ON)
F
G(ON)
F
= 600A, V
dl
= 600A, V
dl
Test Conditions
Test Conditions
F
F
/dt = 3000A/µs
/dt = 3000A/µs
V
V
V
V
L
L
= R
= R
I
I
GE
CE
GE
CE
C
C
= 600A
= 600A
= 900V
= 900V
= ±15V
100nH
= ±15V
100nH
G(OFF)
G(OFF)
R
R
= 900V,
= 900V,
= 3.3
= 3.3
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1200
1500
Typ.
Typ.
140
190
250
250
220
150
350
100
170
270
400
250
350
250
400
150
6.8
DIM600DDM17-A000
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
/
9
Units
Units
mJ
mJ
µC
µC
mJ
mJ
mJ
µC
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A