DIM600DDM17-A000 Dynex Semiconductor, DIM600DDM17-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM600DDM17-A000
• Description: Dual Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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Symbol
ELECTRICAL CHARACTERISTICS
T
Note:
€ Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + L
V
V
SC
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
CE(sat)
R
GE(TH)
C
I
I
V
I
L
ces
ces
I
FM
INT
F
ies
F
M
Data
€
= 25° C unless stated otherwise.
SEMICONDUCTOR
€
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance -per arm
Internal resistance –per arm
Short circuit. I
Parameter
sc
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
V
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE(max)
= 1ms
= 600A
= 600A, T
= 125° C, V
= 30mA, V
10µs,
= 0V, V
= 0V, V
= ±20V, V
= 15V, I
= 15V, I
= 25V, V
= V
Test Conditions
CES
CE
CE
case
C
C
GE
GE
= 600A
= 600A, T
cc
CE
= V
= V
- L*×di/dt
= V
= 125° C
= 0V, f = 1MHz
= 1000V,
= 0V
CES
CES
-
-
CE
, T
case
case
= 125° C
= 125° C
I
I
1
2
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2780
2400
Typ.
0.27
3.4
2.1
5.5
2.7
2.0
3.8
45
-
DIM600DDM17-A000
-
-
-
-
Max.
1200
4.0
600
2.4
20
6.5
3.2
2.3
1
4
-
-
-
-
-
4
/
9
Units
mA
m
mA
nH
µA
nF
V
V
V
V
A
A
V
A
A