DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 7

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1200
1000
700
600
500
400
300
200
100
800
600
400
200
0
0
0
0
T
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
j
= 125˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
200
T
T
j
j
= 125˚C
= 25˚C
400
Reverse voltage, V
Forward voltage, V
600
800
R
F
- (V)
1.6
- (V)
1000
1.8
1200
2.0
2.2
1400
2.4
1000
1400
1200
1000
100
800
600
400
200
10
0.001
1
0
0
Fig. 8 IGBT reverse bias safe operating area
Module I
Chip I
T
V
R
case
ge
g
= 1.2 Ohms
Fig. 10 Transient thermal impedance
= ±15V
IGBT
Diode
= 125˚C
200
C
C
0.01
Collector emitter voltage, V
400
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
600
Time - (s)
DIM600BSS12-E000
0.6626
0.0366
1.6697
0.0518
0.1
1
800
13.4278
5.7405
1.2397
1.6595
2
1000
ce
- (V)
23.0059
38.1633
47.4367
37.3209
1
3
1200
118.8096
170.5037
15.5853
17.2352
IGBT
Diode
4
1400
10
7/9