DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 4

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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DIM600BSS12-E000
ELECTRICAL CHARACTERISTICS
T
case
Note:
* L is the circuit inductance + L
4/9
Symbol
V
V
SC
= 25˚C unless stated otherwise.
R
I
I
C
GE(TH)
CE(sat)
I
V
L
CES
GES
I
FM
INT
F
ies
M
Data
F
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance
Short circuit. I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
SC
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
= 1ms
= 600A
= 600A, T
= 125˚C, V
= 24mA, V
10 s, V
= 25V, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
Test Conditions
CE(max)
CE
CE
CC
C
C
case
GE
GE
= 600A
= 600A, , T
= V
= V
CE
= 900V,
= V
= 125˚C
= 0V, f = 1MHz
= V
= 0V
CES
CES
CE
CES
-
-
, T
– L*. di/dt
case
case
= 125˚C
= 125˚C
I
I
1
2
Min.
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
2400
Typ.
1.65
1.65
0.23
5.8
1.7
2.0
42
20
-
-
-
-
-
-
Max.
1200
2.15
2.15
2.15
600
6.5
2.5
1
5
2
-
-
-
-
-
Units
m
mA
mA
nH
nF
V
V
V
A
A
V
V
A
A
A