DIM375WKS06-S000 Dynex Semiconductor, DIM375WKS06-S000 Datasheet - Page 6

• Manufacturer Part Number: DIM375WKS06-S000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

DIM375WKS06-S000
6/8
400
100
700
600
500
300
200
300
250
200
150
100
50
0
0
0
0
Fig.7 Diode reverse bias safe operating area
T
V
and not the auxiliary terminals
Fig.6 Diode typical forward characteristics
j
F
= 125˚C
is measured at power busbars
100
0.5
T
T
j
j
= 25˚C
= 125˚C
200
Reverse voltage, V
Foward voltage, V
1.0
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
300
1.5
400
F
R
- (V)
2.0
- (V)
500
2.5
600
3.0
700
1000
800
600
500
300
200
100
100
900
700
400
10
0.001
1
0
0
T
V
R
j
ge
g
= 125˚C
Fig.7 Reverse bias safe operating area
= 4.7
= ±15V
IGBT
Diode
Fig.8 Transient thermal impedance
0.01
200
Collector-emitter voltage, V
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
Pulse width, t
400
1.6941
0.1069
3.0955
0.0895
0.1
Module
Chip
1
www.dynexsemi.com
p
- (s)
17.2139
6.7097
2.6571
4.363
2
ce
- (V)
600
21.9182
16.1073
17.3886
9.0831
1
3
Transistor
Diode
92.4022
98.6071
71.8108
54.477
4
800
10