DIM375WKS06-S000 Dynex Semiconductor, DIM375WKS06-S000 Datasheet - Page 5

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DIM375WKS06-S000

Manufacturer Part Number
DIM375WKS06-S000
Description
IGBT Chopper Module
Manufacturer
Dynex Semiconductor
Datasheet
TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
600
500
700
400
300
200
100
45
40
35
30
25
20
15
10
Fig.4 Typical switching energy vs collector current
5
0
0
0
0
Conditions:
T
V
R
Common emitter
T
V
busbars and not the
auxiliary terminals
case
cc
g
case
ce
= 4.7 ohms
= 300V
is measured at power
50
= 125ºC
Fig.3 Typical output characteristics
= 25˚C
1
100
Collector-emitter voltage, V
Collector current, I
150
2.0
200
250
3
C
- (A)
ce
- (V)
300
4
V
V
V
V
GE
GE
GE
GE
350
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
400
5
400
300
100
200
600
500
700
60
50
40
30
20
10
Fig.5 Typical switching energy vs gate resistance
0
0
2
0
Common emitter
T
V
busbars and not the
auxiliary terminals
case
ce
is measured at power
E
E
E
Fig.4 Typical output characteristics
off
on
rec
4
= 125˚C
1.0
Collector-emitter voltage, V
Gate resistance, R
6
2.0
8
DIM375WKS06-S000
3.0
10
g
- (Ohms)
4.0
ce
12
- (V)
V
V
V
V
5.0
14
GE
GE
GE
GE
= 10V
= 12V
= 15V
= 20V
16
6.0
5/8

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