DIM250WHS06-S000 Dynex Semiconductor, DIM250WHS06-S000 Datasheet - Page 6

• Manufacturer Part Number: DIM250WHS06-S000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

DIM250WHS06-S000
6/8
350
200
500
450
400
300
250
150
100
50
200
180
160
140
120
100
0
80
60
40
20
0
0
0
V
and not the auxiliary terminals
T
Fig.7 Diode reverse bias safe operating area
Fig.6 Diode typical forward characteristics
F
j
= 125˚C
is measured at power busbars
100
0.5
T
T
j
j
= 25˚C
= 125˚C
200
Foward voltage, V
Reverse voltage, V
1.0
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
300
1.5
400
F
R
- (V)
2.0
- (V)
500
2.5
600
3.0
700
Ir(A)
1000
800
600
500
300
200
100
100
900
700
400
10
0.001
1
0
0
Module I
Chip I
T
V
R
j
ge
g
= 125˚C
Fig.7 Reverse bias safe operating area
= 4.7 Ohms
= ±15V
IGBT
Diode
Fig.8 Transient thermal impedance
C
C
0.01
200
Collector-emitter voltage, V
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
Pulse width, t
400
2.5411
0.1069
4.6432
0.0895
0.1
1
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p
- (s)
10.0645
25.8208
2.6571
4.363
2
ce
- (V)
600
13.6426
21.9182
24.1609
17.3886
1
3
Transistor
Diode
147.9106
81.7155
92.4022
71.8108
4
800
10