DIM250WHS06-S000 Dynex Semiconductor, DIM250WHS06-S000 Datasheet - Page 5
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DIM250WHS06-S000
Manufacturer Part Number
DIM250WHS06-S000
Description
IGBT Chopper Module
Manufacturer
Dynex Semiconductor
Datasheet
1.DIM250WHS06-S000.pdf
(8 pages)
TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
450
400
250
500
350
300
200
150
100
45
40
35
30
25
20
15
10
Fig.4 Typical switching energy vs collector current
50
5
0
0
0
0
Conditions:
T
V
R
case
Common emitter
T
V
busbars and not the
auxiliary terminals
cc
g
case
ce
= 4.7 ohms
= 300V
is measured at power
= 125ºC
Fig.3 Typical output characteristics
= 25˚C
50
1
Collector-emitter voltage, V
Collector current, I
100
2.0
150
C
3
- (A)
200
ce
- (V)
4
250
V
V
V
V
GE
GE
GE
GE
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
300
5
450
400
350
300
150
100
250
200
500
40
35
30
25
20
15
10
Fig.5 Typical switching energy vs gate resistance
50
5
0
0
2
0
Conditions:
T
V
I
C
Common emitter
T
V
busbars and not the
auxiliary terminals
case
cc
case
ce
= 250A
= 300V
is measured at power
Fig.4 Typical output characteristics
= 125ºC
= 125˚C
4
1.0
Collector-emitter voltage, V
Gate Resistance, R
6
2.0
8
DIM250WHS06-S000
3.0
10
g
- (Ohms)
4.0
ce
12
- (V)
V
V
V
V
5.0
GE
GE
GE
GE
14
= 10V
= 12V
= 15V
= 20V
E
E
E
off
on
rec
6.0
16
5/8