DIM250WHS06-S000 Dynex Semiconductor, DIM250WHS06-S000 Datasheet - Page 5

• Manufacturer Part Number: DIM250WHS06-S000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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450
400
250
500
350
300
200
150
100
45
40
35
30
25
20
15
10
Fig.4 Typical switching energy vs collector current
50
5
0
0
0
0
Conditions:
T
V
R
case
Common emitter
T
V
busbars and not the
auxiliary terminals
cc
g
case
ce
= 4.7 ohms
= 300V
is measured at power
= 125ºC
Fig.3 Typical output characteristics
= 25˚C
50
1
Collector-emitter voltage, V
Collector current, I
100
2.0
150
C
3
- (A)
200
ce
- (V)
4
250
V
V
V
V
GE
GE
GE
GE
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
300
5
450
400
350
300
150
100
250
200
500
40
35
30
25
20
15
10
Fig.5 Typical switching energy vs gate resistance
50
5
0
0
2
0
Conditions:
T
V
I
C
Common emitter
T
V
busbars and not the
auxiliary terminals
case
cc
case
ce
= 250A
= 300V
is measured at power
Fig.4 Typical output characteristics
= 125ºC
= 125˚C
4
1.0
Collector-emitter voltage, V
Gate Resistance, R
6
2.0
8
DIM250WHS06-S000
3.0
10
g
- (Ohms)
4.0
ce
12
- (V)
V
V
V
V
5.0
GE
GE
GE
GE
14
= 10V
= 12V
= 15V
= 20V
E
E
E
off
on
rec
6.0
16
5/8