DIM200PLM33-A000 Dynex Semiconductor, DIM200PLM33-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM200PLM33-A000
• Description: Igbt Modules - Chopper
• Manufacturer: Dynex Semiconductor

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DIM200PLM33-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
T
case
case
4/6
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
Q
I
I
OFF
t
REC
OFF
t
REC
t
t
ON
ON
rr
rr
r
f
r
f
rr
g
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
R
R
= 200A, V
= 200A, V
dI
Test Conditions
G(ON)
dI
Test Conditions
G(ON)
F
F
V
V
/dt = 1000A/ s
/dt = 1100A/ s
V
V
C
C
L ~ 100nH
L ~ 100nH
CE
CE
I
GE
= R
I
GE
= R
ge
ge
C
C
= 1800V
= 1800V
= 200A
= 200A
= 33nF
= 33nF
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 1800V,
= 1800V,
=10
=10
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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1600
1300
Typ.
Typ.
250
240
640
300
420
190
185
220
200
170
640
250
290
115
165
130
6
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C