DIM200PLM33-A000 Dynex Semiconductor, DIM200PLM33-A000 Datasheet

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DIM200PLM33-A000

Manufacturer Part Number
DIM200PLM33-A000
Description
Igbt Modules - Chopper
Manufacturer
Dynex Semiconductor
Datasheet
www.DataSheet4U.com
Replaces issue April 2003, version DS5597-1.1
FEATURES
I
I
I
I
APPLICATIONS
I
I
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10 s short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PLM33-A000
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
10 s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
Choppers
Traction Auxiliaries
The Powerline range of high power modules includes half
The DIM200PLM33-A000 is a 3300V, n channel
The module incorporates an electrically isolated base plate
KEY PARAMETERS
V
V
I
I
*(measured at the power busbars and not the auxiliary terminals)
C
C(PK)
CES
CE(sat)
Fig. 1 Chopper circuit diagram - lower arm control
1(A/C2)
*
2(K)
Fig. 2 Electrical connections - (not to scale)
(See package details for further information)
(typ)
(max)
(max)
Outline type code: P
DIM200PLM33-A000
IGBT Chopper Module
8(C
3300V
3.2V
200A
400A
2)
DIM200PLM33-A000
Preliminary Information
DS5597-2.0 May 2003
3(E2)
7(E
6(G
2)
2)
1/6

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DIM200PLM33-A000 Summary of contents

Page 1

... The DIM200PLM33-A000 is a 3300V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...

Page 2

... DIM200PLM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...

Page 3

... F case I = 200A 125˚C (diode arm) F case V = 25V 0V 1MHz 25V 0V 1MHz 125˚ 2500V – L*. di/ CE(max) CES 2 IEC 60747-9 DIM200PLM33-A000 Min. Typ. Max. Units - - 4.5 5 200 - A - 200 - A ...

Page 4

... DIM200PLM33-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Gate charge g Q Diode reverse recovery charge ...

Page 5

... PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Nominal weight: 750g Module outline type code: P DIM200PLM33-A000 5/6 ...

Page 6

... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...

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