DIM200PLM33-A000 Dynex Semiconductor, DIM200PLM33-A000 Datasheet
DIM200PLM33-A000
Related parts for DIM200PLM33-A000
DIM200PLM33-A000 Summary of contents
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... The DIM200PLM33-A000 is a 3300V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM200PLM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... F case I = 200A 125˚C (diode arm) F case V = 25V 0V 1MHz 25V 0V 1MHz 125˚ 2500V – L*. di/ CE(max) CES 2 IEC 60747-9 DIM200PLM33-A000 Min. Typ. Max. Units - - 4.5 5 200 - A - 200 - A ...
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... DIM200PLM33-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Gate charge g Q Diode reverse recovery charge ...
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... PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Nominal weight: 750g Module outline type code: P DIM200PLM33-A000 5/6 ...
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... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...