HN1K04FU Toshiba Semiconductor, HN1K04FU Datasheet - Page 3
HN1K04FU
Manufacturer Part Number
HN1K04FU
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
1.HN1K04FU.pdf
(5 pages)
(Q1, Q2 common)
0.05
0.03
0.01
100
0.5
0.3
0.1
60
50
40
30
20
10
50
30
10
50
30
10
5
3
1
5
3
0.5
0
0
4.0
Common
source
V DS = 5 V
Ta = 25°C
-0.2
3.0
1
Drain-source voltage V
Drain-source voltage V
2
-0.4 -0.6 -0.8
Drain current I
4
3
I
ïY
I
DR
D
5
2.7
fs
– V
V GS = 2.1 V
– V
ï – I
6
-1.0 -1.2
DS
10
DS
1.8
D
D
G
Common source
V GS = 0
Ta = 25°C
2.4
Common source
Ta = 25°C
8
(mA)
DS
DS
-1.4 -1.6
30
D
S
(V)
(V)
1.5
10
50
I
DR
-1.8
100
12
3
0.05
0.03
0.01
100
1.2
1.0
0.8
0.6
0.4
0.2
0.5
0.3
0.1
0.5
0.3
50
30
10
50
30
10
0
5
3
1
5
3
1
0.1
0
0
Ta = 100°C
1
4.0
2.0
1.8
0.1
Drain-source voltage V
Drain-source voltage V
Drain-source voltage V
0.3 0.5
2
25
-25
I
0.2
D
3
1
– V
I
C – V
D
1.7
4
DS
– V
0.3
GS
(low voltage region)
DS
3
5
V GS = 1.6 V
Common source
V DS = 5 V
5
0.4
Common source
Ta = 25°C
6
Common source
V GS = 0
f = 1 MHz
Ta = 25°C
DS
GS
DS
10
1.65
1.55
1.5
7
(V)
(V)
(V)
0.5
HN1K04FU
C oss
C iss
C rss
8
2002-01-16
30
0.6
9
50