HN1K04FU Toshiba Semiconductor, HN1K04FU Datasheet
HN1K04FU
Manufacturer Part Number
HN1K04FU
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
1.HN1K04FU.pdf
(5 pages)
High Speed Switching Applications
Analog Switch Applications
·
·
·
·
Maximum Ratings
Electrical Characteristics
High input impedance and extremely low drive current.
V
: V
Switching speed is fast.
Suitable for high-density mounting because of a compact package.
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
th
is low and it is possible to drive directly at low-voltage CMOS.
= 0.8 to 2.5 V
Characteristics
Characteristic
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(Ta = = = = 25°C) (Q1, Q2 common)
(Ta = = = = 25°C) (Q1, Q2 common)
Symbol
HN1K04FU
V
P
V
T
T
V
GSS
D
I
R
DS
stg
D
ch
Symbol
(Note)
(BR) DSS
DS (ON)
ïY
I
I
C
C
C
GSS
DSS
V
t
t
on
off
oss
iss
rss
th
fs
ï
-55 to 150
V
I
V
V
V
I
V
V
V
V
V
V
V
D
D
Rating
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
200
150
50
10
50
= 100 mA, V
= 10 mA, V
1
= 50V, V
= 5V, I
= 5V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 10 V, V
= 5 V, I
= 0 to 4.0 V
= 5 V, I
= 0 to 4.0 V
Test Condition
D
D
D
D
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
= 10 mA,
DS
GS
=0 V, f = 1 MHz
=0 V, f = 1 MHz
=0 V, f = 1 MHz
Unit
mW
mA
= 0 V
°C
°C
= 4.0 V
V
V
= 0 V
= 0 V
Weight: 6.8 mg
JEDEC
JEITA
TOSHIBA
Min
0.8
50
20
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
0.11
0.15
6.3
1.3
5.7
20
¾
¾
¾
¾
¾
HN1K04FU
2-2J1C
2002-01-16
―
―
Max
2.5
¾
¾
50
¾
¾
¾
¾
¾
1
1
Unit: mm
Unit
mS
mA
mA
pF
pF
pF
ms
W
V
V
Related parts for HN1K04FU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
HN1K04FU Summary of contents
Page 1
... C V oss off = HN1K04FU V V JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg Min Typ. Max = 0 V ¾ ¾ ¾ ¾ ¾ ¾ 0.8 ¾ 2.5 20 ¾ ...
Page 2
... OUT Marking ( D.U. < < out (c) V OUT Common Source 25° HN1K04FU 90% 10 10% 90 (ON off 2002-01-16 ...
Page 3
... 0.5 0.3 0.1 0.05 0.03 0.01 -1.4 -1.6 -1.8 0 (V) DS 100 0.5 0 100 0.1 (mA) 3 HN1K04FU I – V (low voltage region 4.0 Common source 2.0 1 25°C 1.8 1. 1.6 V 1.55 1.5 0.1 0.2 0.3 0.4 0.5 Drain-source voltage V ( – 100°C Common source - ...
Page 4
... Ambient temperature Ta (°C) *: TOTAL rating 1000 300 100 0.3 30 100 (mA) 120 140 160 4 HN1K04FU t – off OUT I D D.U. < < out = Common source 25°C ...
Page 5
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 HN1K04FU 000707EAA 2002-01-16 ...