MAT12 Analog Devices, MAT12 Datasheet - Page 3

• Manufacturer Part Number: MAT12
• Description: Matched Dual Monolithic Transistor
• Manufacturer: Analog Devices

Preliminary Technical Data
Input Bias Current
Input Offset Current
Input Offset Current Drift
Offset Current Change vs. V
Collector Saturation Voltage
Output Capacitance
Bulk Resistance
Collector-Collector Capacitance
Notes:
1.
2.
3.
4.
5.
6.
7.
Current gain is guaranteed with Collector-Base Voltage (V
Current Gain Match (Δh
Noise Voltage Density is guaranteed, but not 100% tested
This is the maximum change in V
Measured at I
Guaranteed by Design
I
CC
and I
CES
are verified by measurement of I
C
=10μA and guaranteed by design over the specified range of I
CB
FE
) defined as: Δh
I
ΔI
ΔI
V
C
I
C
r
OS
B
OS
BE
CE(SAT)
OB
CC
OS
OS
as V
/ΔT
/ΔV
CB
CB
FE
is swept from 0V to 40V.
= (100(ΔI
CBO
I
-25ºC≤T
I
-25ºC≤T
I
-25ºC≤T
0 ≤ V
I
V
10μA≤I
V
C
C
C
C
=10μA (note 6)
CB
CC
B
= 10μA
= 10μA
= 1mA, I
Rev. PrA | Page 3 of 4
)( h
=15V, I
= 0
CB
FE min
≤ V
C
CB
A
A
A
≤10mA (note6)
≤+85ºC
≤+85ºC
≤+85ºC
) swept from 0 to V
E
)/I
B
MAX
=0
=100μA
C
)
(note 4)
C
MAX
at the indicated collector currents.
40
30
0.05
23
0.3
35
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25
45
0.6
8
90
70
0.1
0.5
MAT12
nA
nA
nA
nA
pA/ºC
pA/V
V
pF
Ω
pF