MMPQ6502 Fairchild, MMPQ6502 Datasheet

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MMPQ6502

Manufacturer Part Number
MMPQ6502
Description
Quad NPN & PNP General Purpose Amplifier
Manufacturer
Fairchild
Datasheet
1.MMPQ6502.pdf (6 pages)
1997 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
Symbol
C
Symbol
J
CEO
CBO
EBO
D
Absolute Maximum Ratings*
, T
*
Thermal Characteristics
These complimentary devices can be used in medium power amplifiers, drivers and
switches with collector currents to 500 mA. These devices are best used when
space is the primary consideration. Sourced from Process 19 & 63. See PN2222A
(NPN) & PN2907A (PNP) for characteristics.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Quad NPN & PNP General Purpose Amplifier
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Derate above 25 C
SOIC-16
E
MMPQ6502
1
B
1
E
2
B
Characteristic
2
Pin #1
E
3
B
3
C
E
1
4
C
B
Parameter
1
4
Effective 4 Die
Each Die
C
2
C
2
C
TA = 25°C unless otherwise noted
3
C
3
C
4
C
TA = 25°C unless otherwise noted
4
C
C
1
3
B
B
1
3
E
E
1
3
TRANSIST
TRANSIST
TRANSISTOR
TRANSIST
TRANSIST
& C
& C
2
4
B
B
OR
OR
OR
OR
4
2
E
E
2
4
TYPE
TYPE
TYPE
TYPE
TYPE
MMPQ6502
NPN
PNP
Max
1000
125
240
8.0
-55 to +150
Value
5.0
1.0
30
60
Units
mW/ C
Units
mW
C/W
C/W
V
V
V
A
C
MMPQ6502, Rev B

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MMPQ6502 Summary of contents

Page 1

... 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Effective 4 Die Each Die TYPE TYPE TYPE TYPE TYPE NPN 2 PNP 4 Value Units 5.0 V 1.0 A -55 to +150 C Max Units MMPQ6502 1000 mW 8.0 mW/ C 125 C/W 240 C/W MMPQ6502, Rev B ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation Voltage V ...

Page 3

SOIC-16 Tape and Reel Data and Package Dimensions SOIC(16lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 4

SOIC-16 Tape and Reel Data and Package Dimensions, continued SOIC(16lds) Embossed Carrier Tape Configuration: Figure 3 Pkg type SOIC(16lds) 6.60 10.35 16.0 +/-0.30 +/-0.25 +/-0.3 (16mm) Notes: A0, B0, and K0 dimensions ...

Page 5

SOIC-16 Tape and Reel Data and Package Dimensions, continued SOIC-16 (FS PKG Code S3) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1437 October 1999, Rev. A1 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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