PBSS5350T Philips Semiconductors, PBSS5350T Datasheet - Page 4

• Manufacturer Part Number: PBSS5350T
• Description: 50 V/ 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 13
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
50 V, 3 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
= 5 V; I
= 50 V; I
= 50 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
CONDITIONS
B
B
B
B
B
B
B
C
= 50 mA
= 300 mA; note 1
= 200 mA; note 1
C
C
C
C
C
= 100 mA; note 1
= 200 mA; note 1
= 100 mA; note 1
= 300 mA; note 1
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
= 1 A; note 1
B
4
= 0
= 0; T
= I
CE
= 50 mA
e
= 5 V;
= 0; f = 1 MHz
j
= 150 C
200
200
200
130
80
100
1.2
MIN.
90
TYP.
PBSS5350T
Product specification
135
35
MAX.
100
50
100
90
180
320
270
390
1.1
1.2
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A