PBSS5350T Philips Semiconductors, PBSS5350T Datasheet - Page 2

• Manufacturer Part Number: PBSS5350T
• Description: 50 V/ 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
NPN complement: PBSS4350T.
MARKING
Note
1. * = p: Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 13
PBSS5350T
PBSS5350T
TYPENUMBER
Low collector-emitter saturation voltage V
corresponding low R
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
50 V, 3 A
PNP low V
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
CEsat
NAME
(BISS) transistor
MARKING CODE
plastic surface mounted package; 3 leads
ZD*
CEsat
and
(1)
2
DESCRIPTION
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CRP
PACKAGE
CEO
CEsat
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM256
Product specification
PBSS5350T
1
VERSION
135
MAX.
50
2
3
SOT23
3
2
V
A
A
m
UNIT