PBSS4420D Philips Semiconductors, PBSS4420D Datasheet - Page 7

• Manufacturer Part Number: PBSS4420D
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
9397 750 14028
Product data sheet
Table 7:
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 21 April 2005
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 6 A; I
= 4 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 5 V; I
= 20 V; I
= 20 V; I
= 20 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
C
B
= 50 mA
= 200 mA
= 400 mA
= 600 mA
= 400 mA
B
= 50 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
E
E
E
C
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
BE
= i
= 0 A
= 0 A;
= 0.1 A;
C
20 V, 4 A NPN low V
= 0 V
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
300
300
250
200
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4420D
CEsat
Typ
-
-
-
-
450
430
400
310
230
30
60
110
200
300
50
0.79
0.81
0.83
1.0
0.79
12
36
48
230
50
280
100
60
(BISS) transistor
Max
0.1
50
0.1
0.1
-
-
-
-
-
50
90
150
280
420
70
0.85
0.9
1
1.1
1
-
-
-
-
-
-
-
-
Unit
mV
mV
mV
mV
mV
m
V
V
V
V
V
ns
MHz
pF
ns
ns
ns
ns
ns
7 of 16
A
A
A
A