PBSS4420D Philips Semiconductors, PBSS4420D Datasheet - Page 10
PBSS4420D
Manufacturer Part Number
PBSS4420D
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4420D.pdf
(16 pages)
Philips Semiconductors
9397 750 14028
Product data sheet
Fig 11. Collector current as a function of
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(A)
I
C
10
8
6
4
2
0
T
collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
0
amb
= 80 mA
= 72 mA
= 64 mA
= 56 mA
= 48 mA
= 40 mA
= 32 mA
= 24 mA
= 16 mA
= 8 mA
= 25 C
0.4
0.8
1.2
1.6
006aaa334
V
CE
(V)
2.0
Rev. 01 — 21 April 2005
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Fig 12. Collector-emitter saturation resistance as a
R
(1) T
(2) T
(3) T
CEsat
( )
10
10
10
10
1
2
1
2
10
I
function of collector current; typical values
C
amb
amb
amb
/I
1
B
20 V, 4 A NPN low V
= 20
= 100 C
= 25 C
= 55 C
1
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
2
(1)
PBSS4420D
CEsat
10
(2)
3
(3)
(BISS) transistor
10
006aaa335
I
4
C
(mA)
10
5
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