PBSS4240DPN Philips Semiconductors, PBSS4240DPN Datasheet - Page 6

• Manufacturer Part Number: PBSS4240DPN
• Description: 40V low VCEsat NPN/PNP transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Feb 20
handbook, halfpage
40 V low V
TR1 (NPN); T
(1) I
(2) I
(3) I
(4) I
Fig.6
(A)
1.6
1.2
0.8
0.4
I C
B
B
B
B
2
0
= 30 mA.
= 27 mA.
= 24 mA.
= 21 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
amb
0.4
= 25 C.
CEsat
(5) I
(6) I
(7) I
(8) I
0.8
B
B
B
B
(1)
(2)
(3)
NPN/PNP transistor
= 18 mA.
= 15 mA.
= 12 mA.
= 9 mA.
1.2
1.6
(9) I
(10) I
V CE (V)
(10)
(4)
(5)
(6)
(7)
(8)
(9)
MHC475
B
B
= 6 mA.
= 3 mA.
2
6
handbook, halfpage
R CEsat
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.7
( )
10
10
10
10
amb
amb
amb
10
1
3
2
1
= 150 C.
= 25 C.
= 55 C.
1
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
C
/I
B
= 20.
1
10
PBSS4240DPN
10
(1)
(3)
2
Product specification
(2)
10
3
I C (mA)
MHC476
10
4