PBSS4240DPN Philips Semiconductors, PBSS4240DPN Datasheet - Page 4

• Manufacturer Part Number: PBSS4240DPN
• Description: 40V low VCEsat NPN/PNP transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Feb 20
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
I
I
h
f
C
TR1 (NPN)
h
V
V
V
R
TR2 (PNP)
h
V
V
V
R
SYMBOL
amb
CBO
CEO
EBO
T
FE
FE
FE
CEsat
BEsat
BEon
CEsat
BEsat
BEon
c
CEsat
CEsat
40 V low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
transition frequency
collector capacitance
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
DC current gain
saturation voltage
saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
p
CEsat
300 s;
PARAMETER
NPN/PNP transistor
0.02.
V
V
V
V
V
I
f = 100 MHz
V
f = 1 MHz
V
V
V
I
I
I
I
I
V
I
V
V
V
V
I
I
I
I
I
V
I
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CB
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 50 mA; V
= 100 mA; I
= 500 mA; I
= 1 A; I
= 2 A; I
= 1 A; I
= 1 A; I
= 100 mA; I
= 500 mA; I
= 1 A; I
= 2 A; I
= 1 A; I
= 1 A; I
= 5 V; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
4
CONDITIONS
B
B
B
B
B
B
B
B
C
= 100 mA
= 200 mA; note 1
= 100 mA
= 100 mA
C
C
C
C
C
= 100 mA
= 200 mA; note 1
= 50 mA
= 100 mA; note 1
E
E
B
E
C
C
C
C
C
= 0
= 1 mA
= 500 mA
= 1 A
= 2 A; note 1
= 1 A
CE
B
B
= 0
= 0; T
= 0
= I
= 100 mA
= 500 mA
= 1 A
= 2 A; note 1
= 1 A
B
B
= 1 mA
= 50 mA
= 10 V;
e
= 1 mA
= 50 mA
= 0;
j
= 150 C
300
150
300
200
75
300
250
160
50
MIN.
PBSS4240DPN
60
80
150
300
TYP.
90
100
180
400
Product specification
100
50
100
100
12
900
75
100
200
400
1.2
1.1
200
800
260
MAX.
120
145
260
530
1.1
1
nA
nA
nA
MHz
pF
mV
mV
mV
mV
V
V
m
mV
mV
mV
mV
V
V
m
UNIT
A