PBSS4160T Philips Semiconductors, PBSS4160T Datasheet - Page 3

• Manufacturer Part Number: PBSS4160T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
3. Operated under pulsed conditions: duty cycle
2004 May 12
handbook, halfpage
V
V
V
I
I
I
I
P
T
T
T
SYMBOL
C
CM
B
BM
stg
j
amb
CBO
CEO
EBO
tot
60 V, 1 A
NPN low V
(1) Device mounted with 1 cm
(2) Device mounted on standard footprint.
Fig.2
(mW)
P tot
500
400
300
200
100
0
0
Power derating curves.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
40
CEsat
(1)
(2)
PARAMETER
(BISS) transistor
2
collector tab.
80
120
T amb ( C)
MLE128
160
open emitter
open base
open collector
note 1
note 2
t = 1 ms or limited by T
t
T
T
T
p
amb
amb
amb
20%, pulse width t
300 s;
3
25 C; note 1
25 C; note 2
25 C; notes 1 and 3
CONDITIONS
0.02
p
j(max)
10 ms.
65
65
MIN.
2
collector mounting pad.
80
60
5
0.9
1
2
300
1
270
400
1.25
+150
150
+150
PBSS4160T
Product specification
MAX.
V
V
V
A
A
A
mA
A
mW
mW
W
C
C
C
UNIT