PBSS4160T Philips Semiconductors, PBSS4160T Datasheet - Page 2

• Manufacturer Part Number: PBSS4160T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5160T.
MARKING
Note
1. * = p: made in Hong Kong
ORDERING INFORMATION
2004 May 12
PBSS4160T
PBSS4160T
TYPE NUMBER
Low collector-emitter saturation voltage V
High collector current capability I
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor
BCP55 and BCX55.
Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.
Power management:
– DC-to-DC conversion
– Supply line switching.
Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
60 V, 1 A
NPN low V
* = t: made in Malaysia
* = W: made in China.
and LEDs)
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
*U5
MARKING CODE
C
and I
plastic surface mounted package; 3 leads
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
1
2
3
1
PARAMETER
3
base
emitter
collector
2
MAM255
Product specification
DESCRIPTION
PBSS4160T
1
60
1
2
250
MAX.
VERSION
SOT23
3
2
V
A
A
m
UNIT