PBSS4160DS Philips Semiconductors, PBSS4160DS Datasheet - Page 9

• Manufacturer Part Number: PBSS4160DS
• Description: NPN/NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
8. Test information
PBSS4160DS_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
I
C
= 0.5 A; I
oscilloscope
t
Bon
d
t
= 25 mA; I
on
V
Rev. 02 — 27 June 2005
t
I
r
(probe)
450
Boff
= 25 mA; R1 = open; R2 = 100 ; R
R1
R2
R
60 V, 1 A NPN/NPN low V
B
V
BB
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
I
t
(100 %)
Boff
s
PBSS4160DS
t
off
B
= 300 ; R
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
(BISS) transistor
t
C
f
= 20
I
006aaa003
C
(100 %)
t
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