PBSS4140S Philips Semiconductors, PBSS4140S Datasheet - Page 3

• Manufacturer Part Number: PBSS4140S
• Description: 40 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 27
R
I
I
I
h
V
R
V
V
f
C
amb
CBO
CEO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th j-a
CEsat
c
40 V low V
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
NPN transistor
PARAMETER
0.02.
V
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 500 mA; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
B
B
= 100 mA
= 100 mA
C
CONDITIONS
C
C
C
C
C
C
B
E
= 0
= 1 mA
= 500 mA
= 1 A
= 1 A
CE
B
B
B
3
= 0
= I
= 0
= 0; T
= 1 mA
= 50 mA
= 50 mA; note 1
in free air; note 1
= 10 V; f = 100 MHz
e
= 0; f = 1 MHz
amb
CONDITIONS
= 150 C
300
300
200
150
MIN.
260
VALUE
TYP.
150
PBSS4140S
Product specification
100
50
100
100
900
200
250
500
<500
1.2
1.1
10
MAX.
UNIT
K/W
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A