PBSS4140DPN NXP Semiconductors, PBSS4140DPN Datasheet - Page 3

• Manufacturer Part Number: PBSS4140DPN
• Description: 40 V low VCEsat NPN/PNP transistor
• Manufacturer: NXP Semiconductors

www.DataSheet.co.kr
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2001 Dec 13
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
40 V low V
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to
ambient
CEsat
PARAMETER
PARAMETER
NPN/PNP transistor
open emitter
open base
open collector
T
T
in free air; note 1
amb
amb
3
25 C; note 1
25 C; note 1
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
208
PBSS4140DPN
40
40
5
1
2
1
370
+150
150
+150
600
Product specification
MAX.
UNIT
2
2
K/W
V
V
V
A
A
A
mW
mW
.
.
C
C
C
UNIT
Datasheet pdf - http://www.DataSheet4U.net/