PBSS306NX Philips Semiconductors, PBSS306NX Datasheet - Page 8

• Manufacturer Part Number: PBSS306NX
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS306NX_1
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Collector-emitter saturation resistance as a
R
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
( )
10
10
10
10
10
10
10
1
1
1
2
10
3
2
1
2
10
I
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aaa639
006aaa642
3
3
I
I
C
C
(mA)
(mA)
(1)
(2)
(3)
10
10
Rev. 01 — 21 August 2006
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
100 V, 4.5 A NPN low V
T
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(1)
(2)
(3)
PBSS306NX
10
10
2
2
CEsat
10
10
(BISS) transistor
(1)
(2)
(3)
006aaa640
3
006aaa644
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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