PBSS2540F Philips Semiconductors, PBSS2540F Datasheet - Page 2

• Manufacturer Part Number: PBSS2540F
• Description: 40 V low V NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
package.
PNP complement: PBSS3540F.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Oct 31
PBSS2540F
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat leads
Enhanced performance over SOT23 general purpose
transistors.
General purpose switching and muting
Low frequency driver circuits
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras, hand-held devices).
CBO
CEO
EBO
tot
40 V low V
TYPE NUMBER
CEsat
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SC-89 (SOT490) plastic
CEsat
PARAMETER
NPN transistor
MARKING CODE
2C
open emitter
open base
open collector
T
amb
2
25 C
QUICK REFERENCE DATA
PINNING
CONDITIONS
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
Fig.1
PIN
1
2
3
1
Top view
Simplified outline (SC-89; SOT490) and
symbol.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
3
PARAMETER
2
65
65
DESCRIPTION
MIN.
MAM410
Product specification
1
40
40
6
500
1
100
250
+150
150
+150
PBSS2540F
MAX.
3
2
40
500
1
<500
MAX.
V
V
V
mA
A
mA
mW
C
C
C
UNIT
V
mA
A
m
UNIT