PBSS2540E Philips Semiconductors, PBSS2540E Datasheet - Page 3

• Manufacturer Part Number: PBSS2540E
• Description: 500 mA NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 15063
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
P
tot
300
200
100
Rev. 01 — 4 May 2005
0
0
40
(1)
(2)
Conditions
open emitter
open base
open collector
T
amb
40 V, 500 mA NPN low V
2
80
25 C
120
T
amb
006aaa412
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
[1]
[2]
160
Min
-
-
-
-
-
-
-
-
-
65
65
PBSS2540E
CEsat
(BISS) transistor
Max
40
40
6
500
1
100
150
250
150
+150
+150
www.DataSheet4U.com
V
Unit
V
V
mA
A
mA
mW
mW
2
C
C
C
.
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