NP062A1 Panasonic Semiconductor, NP062A1 Datasheet
NP062A1
Manufacturer Part Number
NP062A1
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.NP062A1.pdf
(3 pages)
Composite Transistors
NP062A1
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
• Two elements incorporated into one package
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
• UNR32A1 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
FE
Ratio
2. * : Ratio between one and another
*
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
h
Symbol
T
V
R
P
FE(Small/
I
T
V
V
CBO
CEO
a
Large)
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
/ R
OL
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
125
125
CB
CE
EB
CE
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00271BED
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 7Z
Internal Connection
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
−30%
Min
4
3
0.5
4.9
0.8
50
50
35
Tr1
6
1
0.99
Typ
150
1.0
10
5
2
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Tr2
4
3
+30%
Max
0.25
0.1
0.5
0.5
0.2
1.2
Unit: mm
0 to 0.02
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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NP062A1 Summary of contents
Page 1
... Composite Transistors NP062A1 Silicon NPN epitaxial planar type For digital circuits ■ Features • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Basic Part Number • UNR32A1 × 2 ■ ...
Page 2
... NP062A1 140 120 100 100 120 140 Ambient temperature T (°C) a 250 = 85°C T 200 a 25°C 150 100 −25° 100 Collector current I (mA) C 100 = 0 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...