2SK2211 Panasonic Semiconductor, 2SK2211 Datasheet
2SK2211
Manufacturer Part Number
2SK2211
Description
Silicon N-Channel MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2211.pdf
(2 pages)
Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
For switching
Note) * PC board: Copper foil of the drain portion should have a area of
Note) *: Pulse measurement
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate to Source voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Low ON-resistance R
High-speed switching
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
Features
Absolute Maximum Ratings T
Electrical Characteristics T
1 cm
Parameter
Parameter
2
or more and the board thickness should be 1.7 mm.
DS(ON)
*
*
Symbol
V
V
T
I
P
P
I
GSO
PD
DS
D
ch
stg
D
a
R
R
Symbol
DS(ON)1
DS(ON)2
V
V
I
I
C
t
Yfs
C
C
V
t
OFF
DSS
GSS
ON
a
25 C
DSS
GSS
t
oss
rss
iss
f
th
25 C
55 to 150
Ratings
150
30
20
1
1
2
V
V
I
I
V
V
V
V
V
V
R
D
GS
L
DS
GS
DS
GS
GS
DS
DS
GS
0.1 mA, V
10
0.1 mA, V
25 V, V
5 V, I
4 V, I
10 V, I
10 V, I
10 V, V
10 V, I
15 V, V
Unit
W
V
V
A
A
D
D
Conditions
C
C
D
D
D
GS
GS
GS
DS
DS
1 mA
0.5 A
0.5 A
0.5 A
0.5 A, V
0
0, f
0
0
0
1 MHz
DD
Marking Symbol: 2M
Internal Connection
0.4
10 V
0.5
±0.08
1.5
±0.08
±0.1
45˚
3
G
3.0
4.5
1.6
Min
0.8
0.5
30
20
±0.15
2
±0.1
±0.2
marking
Mini-Power Type Package (3-pin)
1
0.48
0.35
Typ
160
87
69
23
12
60
Max
0.75
S
0.6
10
10
2
1.5
1: Gate
2: Drain
3: Source
D
±0.1
0.4
Unit : mm
±0.04
Unit
pF
pF
pF
ns
ns
ns
V
V
V
S
A
A
1
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2SK2211 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET For switching Features Low ON-resistance R DS(ON) High-speed switching Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Absolute Maximum Ratings T Parameter Symbol Drain to Source voltage V Gate to Source voltage ...
Page 2
... 3 2 2.0 1.5 3.0 V 1.0 2.5 V 0.5 2 Drain to source voltage 1 1.2 1 0.4 0 0.5 1.0 1.5 2.0 2 Drain current Silicon MOS FETs (Small Signal 3 2.5 2.0 1.5 1.0 0 ...