CR02 Mitsubishi Electric Semiconductor, CR02 Datasheet - Page 3

• Manufacturer Part Number: CR02
• Description: LOW POWER USE PLANAR PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
200
180
160
140
120
100
200
180
160
140
120
100
10
10
10
80
60
40
20
80
60
40
20
–1
–2
10
0
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
–40 –20
2
1
0
10
10
–3
–2
0
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
V
2 3 5 7
JUNCTION TEMPERATURE (°C)
2 3
2 3
V
GD
V
P
GT
JUNCTION TEMPERATURE
GATE CHARACTERISTICS
FGM
G(AV)
(JUNCTION TO AMBIENT)
= 0.2V
0
# 1
GATE CURRENT (mA)
= 0.8V
5 7 10
5 710
10
GATE CURRENT VS.
# 2
= 6V
20
–1
= 0.01W
2 3 5 7
I
(T
–2
GT
1
40
TIME (s)
j
= 25°C)
2 3 5 7 10
2 3 5 710
= 100µA
TYPICAL EXAMPLE
60
10
0
2 3 5 7
80
See 3
P
I
FGM
100
GM
–1
2
I
# 1 32µA
# 2
10
GT
= 0.1W
120
2 3 5 7 10
2 3 5 7 10
= 0.1A
1
2 3 5 7
(25°C)
140
9µA
160
10
3
0
2
MITSUBISHI SEMICONDUCTOR THYRISTOR
10
10
10
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
MAXIMUM AVERAGE POWER DISSIPATION
7
5
3
2
7
5
3
2
7
5
3
2
0
0
3
2
1
0
–60
–40 –20
0
AVERAGE ON-STATE CURRENT (A)
–40
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE TRIGGER VOLTAGE VS.
(SINGLE-PHASE HALF WAVE)
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
–20 0 20
RESISTIVE, INDUCTIVE LOADS
0
0.1
20
= 30°
DISTRIBUTION
40
PLANAR PASSIVATION TYPE
TYPICAL EXAMPLE
60°
0.2
40
TYPICAL EXAMPLE
60
90°
60 80 100 120
80
100
120°
360°
LOW POWER USE
0.3
120
180°
140
CR02AM
140
160
0.4
Feb.1999