CR02 Mitsubishi Electric Semiconductor, CR02 Datasheet - Page 2

• Manufacturer Part Number: CR02
• Description: LOW POWER USE PLANAR PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
DC
3V
I
I
V
V
V
I
I
R
2. If special values of I
RRM
DRM
GT
H
TM
GT
GD
th (j-a)
Symbol
3. I
The above values do not include the current flowing through the 1k
GT
I
SWITCH 1 : I
SWITCH 2 : V
(Inner resistance of voltage meter is about 1k )
GT
Item
, V
( A)
GT
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
measurement circuit.
10
10
10
10
SWITCH
MAXIMUM ON-STATE CHARACTERISTICS
–1
–2
I
A3
7
5
3
2
7
5
3
2
7
5
3
2
R
1k
GS
1
0
1.0
GT
GK
GT
GT
T
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
1 ~ 30
measurement
a
1.2
Parameter
A
measurement
1
= 25°C
I
A2
GT
ON-STATE VOLTAGE (V)
2
1.4
V1
V
GT
1.6
20 ~ 50
TUT
1.8
B
A1
2.0
T
T
T
T
T
T
T
Junction to ambient
60
2.2
j
j
a
a
j
j
j
=125 C, V
=125 C, V
=125 C, V
=25 C, V
=25 C, V
=25 C, I
=25 C, V
DC
6V
40 ~ 100
2.4
C
TM
D
D
D
RRM
DRM
D
=6V, I
=12V, R
2.6
=6V, I
=0.6A, instantaneous value
=1/2V
resistance between the gate and cathode.
applied
applied, R
T
T
=0.1A
DRM
=0.1A
GK
=1k
, R
Test conditions
GK
3
GK
3
=1k
=1k
MITSUBISHI SEMICONDUCTOR THYRISTOR
10
9
8
7
6
5
4
3
2
1
0
10
RATED SURGE ON-STATE CURRENT
0
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
4
5 7 10
PLANAR PASSIVATION TYPE
1
Min.
0.2
—
—
—
—
—
—
1
2 3
LOW POWER USE
Limits
Typ.
—
—
—
—
—
—
—
—
4
5 7 10
CR02AM
Max.
100
180
0.1
0.1
1.6
0.8
—
3
2
2
Feb.1999
Unit
mA
mA
mA
C/W
V
V
V
A